UGB10DCTHE3/81【PDF 1/5 页】DIODE 10A 200V 20NS DUAL UF

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BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT

Vishay General Semiconductor

Document Number: 88549

Revision: 07-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Dual Common Cathode Ultrafast Rectifier

FEATURES

? Glass passivated chip junction

Ultrafast recovery times

Soft recovery characteristics

Low switching losses, high efficiency

High forward surge capability

Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching power supplies, freewheeling diodes,

dc-to-dc converters and polarity protection application.

MECHANICAL DATA

Case:

TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0

flammability rating

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix

for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

5 A x 2

VRRM

100 V, 150 V, 200 V

IFSM

55 A

trr

25 ns

0.895 V

max. 150 °C

BYQ28E & UG10 BYQ28EF & UGF10

BYQ28EB & UGB10

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

PIN 1

PIN 2

HEATSINK

PIN 2

PIN 1

PIN 3

ITO-220AB

TO-263AB

MAXIMUM RATINGS (TC

= 25 °C unless otherwise noted)

PARAMETER SYMBOL

BYQ28E-100 BYQ28E-150 BYQ28E-200

UG10BCT UG10CCT UG10DCT

UNIT

Maximum repetitive peak reverse voltage VRRM

100 150 200 V

Working peak reverse voltage VRWM

100 150 200 V

Maximum DC blocking voltage VDC

100 150 200 V

Maximum average forward rectified current at TC

= 100 °C

total device

per diode

F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

IFSM

55 A

Non-repetitive peak reverse current per diode at tp = 100 μs IRSM

0.2 A

Electrostatic discharge capacitor voltage,

human body model: C = 250 pF, R = 1.5 kΩ

8 kV

Operating junction and storage temperature range TJ, TSTG

- 40 to + 150 °C

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

VAC

1500 V

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